The effective carrier lifetime measurement in silicon: The conductivity modulation method
نویسندگان
چکیده
منابع مشابه
Carrier lifetime measurement on electroluminescent metal–oxide–silicon tunneling diodes
The temporal response of the electroluminescence at the Si band gap energy from a metal–oxide– silicon ~MOS! tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley–Read–Hall ~SRH! recombination lifetimes are 18 and 25.8 ms for the rising and falling edges, respectively, and that the ratio for SRH, radiati...
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Mirage effect is contactless and non destructive method which has been used a lot to determine thermal properties of different kind of samples , transverse photothermal deflection PTD in skimming configuration with ccd camera and special programs is used to determine thermal conductivity of porous silicon ps film. Ps samples were prepared by electrochemical etching. Thermal conductivity wit...
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ژورنال
عنوان ژورنال: Journal of King Saud University - Science
سال: 2010
ISSN: 1018-3647
DOI: 10.1016/j.jksus.2009.12.002